Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25℃
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1440 pF @ 25 V
Power Dissipation (Max)
850mW (Ta), 20W (Tc)
Operating Temperature
150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CPT3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
