Technical Parameter
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25℃
25mA
Drive Voltage (Max Rds On, Min Rds On)
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 10 V
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
-55 ℃ ~ 125 ℃
Mounting Type
Surface Mount
Supplier Device Package
-